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| Datasheet File OCR Text: |
| NE W CMSD2004S HIGH VOLTAGE SWITCHING DIODE Central DESCRIPTION TM Semiconductor Corp. SUPER mini TM The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. SOT-323 CASE The following configurations are available: CMSD2004S DUAL, IN SERIES SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg QJA MARKING CODE: B6D UNITS V V mA mA mA mA mA mW C C/W MAXIMUM RATINGS (TA=25C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 ms Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 240 300 200 225 625 4000 1000 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL BVR IR IR IR IR VF CT trr TEST CONDITIONS IR=100mA VR=200V VR=200V, TA=150C VR=240V VR=240V, TA=150C IF=100mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA,RL=100W MIN 300 MAX 100 100 1.0 5.0 50 UNIT V nA mA nA mA V pF ns 280 All dimensions in inches (mm). TOP VIEW LEAD CODE 8 6! 6 A8! R3 R2 281 |
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